VS-ETF150Y65N - Vishay Semiconductor Diodes Division

Part Number	VS-ETF150Y65N
Part Status	Active
IGBT Type	NPT
Configuration	Half Bridge Inverter
Voltage - Collector Emitter Breakdown (Max)	650V
Current - Collector (Ic) (Max)	201A
Power - Max	600W
Vce(on) (Max) @ Vge, Ic	2.17V @ 15V, 150A
Current - Collector Cutoff (Max)	-
Input Capacitance (Cies) @ Vce	-
Input	Standard
NTC Thermistor	Yes
Operating Temperature	175°C (TJ)
Mounting Type	-
Package / Case	Module
Supplier Device Package	Module
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
VS-ETF075Y60U	Vishay Semiconductor Diodes Division	IGBT 600V 109A 294W EMIPAK-2B	Details
VS-ETF150Y65N	Vishay Semiconductor Diodes Division	IGBT 650V 150A EMIPAK-2B	Details
VS-ETF150Y65U	Vishay Semiconductor Diodes Division	IGBT 650V 150A EMIPAK-2B	Details
VS-ETH0806-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 8A TO220-2	Details
VS-ETH0806FP-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 8A TO220-2	Details
VS-ETH1506-1HM3	Vishay Semiconductor Diodes Division	DIODE HYPERFAST 15A TO-262	Details
VS-ETH1506-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 15A TO220-2	Details
VS-ETH1506FP-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 15A TO220FP	Details
VS-ETH1506S-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 15A D2PAK	Details
VS-ETH1506SHM3	Vishay Semiconductor Diodes Division	DIODE HYPERFAST 15A D2PAK	Details