| Número de pieza | VS-ETF150Y65N |
|---|---|
| Estado de la pieza | Active |
| Tipo de IGBT | NPT |
| Configuración | Half Bridge Inverter |
| Voltaje: ruptura del emisor del colector (máximo) | 650V |
| Current - Collector (Ic) (Max) | 201A |
| Potencia - Max | 600W |
| Vce (on) (Max) @ Vge, Ic | 2.17V @ 15V, 150A |
| Corriente - corte de colector (máximo) | - |
| Capacitancia de entrada (Cies) @ Vce | - |
| Entrada | Standard |
| Termistor NTC | Yes |
| Temperatura de funcionamiento | 175°C (TJ) |
| Tipo de montaje | - |
| Paquete / caja | Module |
| Paquete de dispositivo del proveedor | Module |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
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VS-ETF075Y60U | Vishay Semiconductor Diodes Division | IGBT 600V 109A 294W EMIPAK-2B | Detalles |
|
VS-ETF150Y65N | Vishay Semiconductor Diodes Division | IGBT 650V 150A EMIPAK-2B | Detalles |
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VS-ETF150Y65U | Vishay Semiconductor Diodes Division | IGBT 650V 150A EMIPAK-2B | Detalles |
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VS-ETH0806-M3 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 8A TO220-2 | Detalles |
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VS-ETH0806FP-M3 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 8A TO220-2 | Detalles |
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VS-ETH1506-1HM3 | Vishay Semiconductor Diodes Division | DIODE HYPERFAST 15A TO-262 | Detalles |
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VS-ETH1506-M3 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 15A TO220-2 | Detalles |
|
VS-ETH1506FP-M3 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 15A TO220FP | Detalles |
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VS-ETH1506S-M3 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 15A D2PAK | Detalles |
|
VS-ETH1506SHM3 | Vishay Semiconductor Diodes Division | DIODE HYPERFAST 15A D2PAK | Detalles |
