| Número de pieza | VS-ETF150Y65U |
|---|---|
| Estado de la pieza | Active |
| Tipo de IGBT | Trench |
| Configuración | Three Level Inverter |
| Voltaje: ruptura del emisor del colector (máximo) | 650V |
| Current - Collector (Ic) (Max) | 142A |
| Potencia - Max | 417W |
| Vce (on) (Max) @ Vge, Ic | 2.06V @ 15V, 100A |
| Corriente - corte de colector (máximo) | 100µA |
| Capacitancia de entrada (Cies) @ Vce | 6.6nF @ 30V |
| Entrada | Standard |
| Termistor NTC | No |
| Temperatura de funcionamiento | 175°C (TJ) |
| Tipo de montaje | Chassis Mount |
| Paquete / caja | EMIPAK-2B |
| Paquete de dispositivo del proveedor | EMIPAK-2B |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
 |
VS-ETF075Y60U | Vishay Semiconductor Diodes Division | IGBT 600V 109A 294W EMIPAK-2B | Detalles |
 |
VS-ETF150Y65N | Vishay Semiconductor Diodes Division | IGBT 650V 150A EMIPAK-2B | Detalles |
|
VS-ETF150Y65U | Vishay Semiconductor Diodes Division | IGBT 650V 150A EMIPAK-2B | Detalles |
 |
VS-ETH0806-M3 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 8A TO220-2 | Detalles |
 |
VS-ETH0806FP-M3 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 8A TO220-2 | Detalles |
 |
VS-ETH1506-1HM3 | Vishay Semiconductor Diodes Division | DIODE HYPERFAST 15A TO-262 | Detalles |
|
VS-ETH1506-M3 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 15A TO220-2 | Detalles |
|
VS-ETH1506FP-M3 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 15A TO220FP | Detalles |
 |
VS-ETH1506S-M3 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 15A D2PAK | Detalles |
|
VS-ETH1506SHM3 | Vishay Semiconductor Diodes Division | DIODE HYPERFAST 15A D2PAK | Detalles |
