| Part Number | VS-ETH0806-M3 |
|---|---|
| Part Status | Active |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600V |
| Current - Average Rectified (Io) | 8A |
| Voltage - Forward (Vf) (Max) @ If | 2.65V @ 8A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 21ns |
| Current - Reverse Leakage @ Vr | 12µA @ 600V |
| Capacitance @ Vr, F | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Supplier Device Package | TO-220-2 |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
 |
VS-ETF075Y60U | Vishay Semiconductor Diodes Division | IGBT 600V 109A 294W EMIPAK-2B | Details |
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VS-ETF150Y65N | Vishay Semiconductor Diodes Division | IGBT 650V 150A EMIPAK-2B | Details |
 |
VS-ETF150Y65U | Vishay Semiconductor Diodes Division | IGBT 650V 150A EMIPAK-2B | Details |
|
VS-ETH0806-M3 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 8A TO220-2 | Details |
 |
VS-ETH0806FP-M3 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 8A TO220-2 | Details |
 |
VS-ETH1506-1HM3 | Vishay Semiconductor Diodes Division | DIODE HYPERFAST 15A TO-262 | Details |
|
VS-ETH1506-M3 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 15A TO220-2 | Details |
|
VS-ETH1506FP-M3 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 15A TO220FP | Details |
 |
VS-ETH1506S-M3 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 15A D2PAK | Details |
|
VS-ETH1506SHM3 | Vishay Semiconductor Diodes Division | DIODE HYPERFAST 15A D2PAK | Details |
