| Part Number | VS-ETF150Y65U |
|---|---|
| Part Status | Active |
| IGBT Type | Trench |
| Configuration | Three Level Inverter |
| Voltage - Collector Emitter Breakdown (Max) | 650V |
| Current - Collector (Ic) (Max) | 142A |
| Power - Max | 417W |
| Vce(on) (Max) @ Vge, Ic | 2.06V @ 15V, 100A |
| Current - Collector Cutoff (Max) | 100µA |
| Input Capacitance (Cies) @ Vce | 6.6nF @ 30V |
| Input | Standard |
| NTC Thermistor | No |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | EMIPAK-2B |
| Supplier Device Package | EMIPAK-2B |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
 |
VS-ETF075Y60U | Vishay Semiconductor Diodes Division | IGBT 600V 109A 294W EMIPAK-2B | Details |
 |
VS-ETF150Y65N | Vishay Semiconductor Diodes Division | IGBT 650V 150A EMIPAK-2B | Details |
|
VS-ETF150Y65U | Vishay Semiconductor Diodes Division | IGBT 650V 150A EMIPAK-2B | Details |
 |
VS-ETH0806-M3 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 8A TO220-2 | Details |
 |
VS-ETH0806FP-M3 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 8A TO220-2 | Details |
 |
VS-ETH1506-1HM3 | Vishay Semiconductor Diodes Division | DIODE HYPERFAST 15A TO-262 | Details |
|
VS-ETH1506-M3 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 15A TO220-2 | Details |
|
VS-ETH1506FP-M3 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 15A TO220FP | Details |
 |
VS-ETH1506S-M3 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 15A D2PAK | Details |
|
VS-ETH1506SHM3 | Vishay Semiconductor Diodes Division | DIODE HYPERFAST 15A D2PAK | Details |
