GB10SLT12-247D - GeneSiC Semiconductor

Part Number	GB10SLT12-247D
Part Status	Active
Diode Configuration	1 Pair Common Cathode
Diode Type	Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)	1200V
Current - Average Rectified (Io) (per Diode)	12A
Voltage - Forward (Vf) (Max) @ If	1.9V @ 5A
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	-
Current - Reverse Leakage @ Vr	50µA @ 1200V
Operating Temperature - Junction	-55°C ~ 175°C
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
GB10SLT12-214	GeneSiC Semiconductor	SIC SCHOTTKY DIODE 1200V 10A	Details
GB10SLT12-220	GeneSiC Semiconductor	DIODE SCHOTTKY 1200V 10A TO220AC	Details
GB10SLT12-247D	GeneSiC Semiconductor	DIODE SCHOTTKY 1.2KV 12A TO247D	Details
GB10SLT12-252	GeneSiC Semiconductor	DIODE SCHOTTKY 1.2KV 10A TO252	Details