GB10SLT12-252 - GeneSiC Semiconductor

Part Number	GB10SLT12-252
Part Status	Active
Diode Type	Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)	1200V
Current - Average Rectified (Io)	10A
Voltage - Forward (Vf) (Max) @ If	2V @ 10A
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0ns
Current - Reverse Leakage @ Vr	250µA @ 1200V
Capacitance @ Vr, F	520pF @ 1V, 1MHz
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package	TO-252
Operating Temperature - Junction	-55°C ~ 175°C
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
GB10SLT12-214	GeneSiC Semiconductor	SIC SCHOTTKY DIODE 1200V 10A	Details
GB10SLT12-220	GeneSiC Semiconductor	DIODE SCHOTTKY 1200V 10A TO220AC	Details
GB10SLT12-247D	GeneSiC Semiconductor	DIODE SCHOTTKY 1.2KV 12A TO247D	Details
GB10SLT12-252	GeneSiC Semiconductor	DIODE SCHOTTKY 1.2KV 10A TO252	Details