Part Number | TPD3215M |
---|---|
Part Status | Active |
FET Type | 2 N-Channel (Half Bridge) |
FET Feature | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
Rds On (Max) @ Id, Vgs | 34 mOhm @ 30A, 8V |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | 28nC @ 8V |
Input Capacitance (Ciss) (Max) @ Vds | 2260pF @ 100V |
Power - Max | 470W |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | Module |
Supplier Device Package | Module |
Weight | - |
Country of Origin | - |