| Part Number | TH58BYG2S3HBAI6 |
|---|---|
| Part Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | EEPROM |
| Technology | EEPROM - NAND |
| Memory Size | 4Gb (512M x 8) |
| Clock Frequency | - |
| Write Cycle Time - Word, Page | 25ns |
| Access Time | 25ns |
| Memory Interface | Parallel |
| Voltage - Supply | 1.7 V ~ 1.95 V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 67-VFBGA |
| Supplier Device Package | 67-VFBGA (6.5x8) |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
 |
TH58BVG2S3HBAI4 | Toshiba Memory America, Inc. | 4GB SLC BENAND 24NM BGA 9X11 EE | Details |
 |
TH58BVG2S3HTA00 | Toshiba Semiconductor and Storage | IC EEPROM 4GBIT 25NS 48TSOP | Details |
|
TH58BVG2S3HTAI0 | Toshiba Semiconductor and Storage | IC EEPROM 4GBIT 25NS 48TSOP | Details |
|
TH58BVG3S0HTA00 | Toshiba Semiconductor and Storage | IC EEPROM 4GBIT 25NS 48TSOP | Details |
|
TH58BVG3S0HTAI0 | Toshiba Memory America, Inc. | 8GB SLC BENAND TSOP 24NM 4K PAGE | Details |
|
TH58BYG2S3HBAI4 | Toshiba Memory America, Inc. | 4G SLC NAND BGA 24NM | Details |
|
TH58BYG2S3HBAI6 | Toshiba Semiconductor and Storage | IC EEPROM 4GBIT 25NS 67FBGA | Details |
 |
TH58BYG3S0HBAI6 | Toshiba Memory America, Inc. | 8GB SLC NAND 24NM BGA 6.5X8 1.8V | Details |
