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Home › Product Categories › Integrated Circuits (ICs) › Memory › TH58BVG3S0HTA00
TH58BVG3S0HTA00

TH58BVG3S0HTA00 - Toshiba Semiconductor and Storage

Part Number
TH58BVG3S0HTA00
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
IC EEPROM 4GBIT 25NS 48TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
TH58BVG3S0HTA00 PDF online browsing
Datasheet PDF Download
-
Category
Memory
Delivery Time
1 Day
Date Code
New
Stock Quantity
4008 pcs
Reference Price
USD 0/pcs
Our Price
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TH58BVG3S0HTA00 Detailed Description

Part Number TH58BVG3S0HTA00
Part Status Active
Memory Type Non-Volatile
Memory Format EEPROM
Technology EEPROM - NAND
Memory Size 8Gb (1G x 8)
Clock Frequency -
Write Cycle Time - Word, Page 25ns
Access Time 25ns
Memory Interface Parallel
Voltage - Supply 2.7 V ~ 3.6 V
Operating Temperature 0°C ~ 70°C (TA)
Mounting Type Surface Mount
Package / Case 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package 48-TSOP I
Weight -
Country of Origin -

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