SI8819EDB-T2-E1 - Vishay Siliconix

Part Number	SI8819EDB-T2-E1
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25°C	2.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 3.7V
Rds On (Max) @ Id, Vgs	80 mOhm @ 1.5A, 3.7V
Vgs(th) (Max) @ Id	900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	17nC @ 8V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	650pF @ 6V
FET Feature	-
Power Dissipation (Max)	900mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	4-MICRO FOOT® (0.8x0.8)
Package / Case	4-XFBGA
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
SI8810EDB-T2-E1	Vishay Siliconix	MOSFET N-CH 20V 2.1A MICROFOOT	Details
SI8812DB-T2-E1	Vishay Siliconix	MOSFET N-CH 20V MICROFOOT	Details
SI8816EDB-T2-E1	Vishay Siliconix	MOSFET N-CH 30V MICRO FOOT	Details
SI8817DB-T2-E1	Vishay Siliconix	MOSFET P-CH 20V MICROFOOT	Details
SI8819EDB-T2-E1	Vishay Siliconix	MOSFET P-CH 12V 2.9A 4-MICROFOOT	Details