SI8816EDB-T2-E1 - Vishay Siliconix

Part Number	SI8816EDB-T2-E1
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	-
Drive Voltage (Max Rds On,Min Rds On)	2.5V, 10V
Vgs(th) (Max) @ Id	1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	195pF @ 15V
Vgs (Max)	±12V
FET Feature	-
Power Dissipation (Max)	500mW (Ta)
Rds On (Max) @ Id, Vgs	109 mOhm @ 1A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	4-Microfoot
Package / Case	4-XFBGA
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
SI8810EDB-T2-E1	Vishay Siliconix	MOSFET N-CH 20V 2.1A MICROFOOT	Details
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SI8816EDB-T2-E1	Vishay Siliconix	MOSFET N-CH 30V MICRO FOOT	Details
SI8817DB-T2-E1	Vishay Siliconix	MOSFET P-CH 20V MICROFOOT	Details
SI8819EDB-T2-E1	Vishay Siliconix	MOSFET P-CH 12V 2.9A 4-MICROFOOT	Details