SI8812DB-T2-E1 - Vishay Siliconix

Part Number	SI8812DB-T2-E1
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	-
Drive Voltage (Max Rds On,Min Rds On)	1.2V, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	17nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds	-
Vgs (Max)	±5V
FET Feature	-
Power Dissipation (Max)	500mW (Ta)
Rds On (Max) @ Id, Vgs	59 mOhm @ 1A, 4.5V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	4-Microfoot
Package / Case	4-UFBGA
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
SI8810EDB-T2-E1	Vishay Siliconix	MOSFET N-CH 20V 2.1A MICROFOOT	Details
SI8812DB-T2-E1	Vishay Siliconix	MOSFET N-CH 20V MICROFOOT	Details
SI8816EDB-T2-E1	Vishay Siliconix	MOSFET N-CH 30V MICRO FOOT	Details
SI8817DB-T2-E1	Vishay Siliconix	MOSFET P-CH 20V MICROFOOT	Details
SI8819EDB-T2-E1	Vishay Siliconix	MOSFET P-CH 12V 2.9A 4-MICROFOOT	Details