SSM6J214FE(TE85L,F - Toshiba Semiconductor and Storage

Part Number	SSM6J214FE(TE85L,F
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 10V
Rds On (Max) @ Id, Vgs	50 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id	1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	7.9nC @ 4.5V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	560pF @ 15V
FET Feature	-
Power Dissipation (Max)	500mW (Ta)
Operating Temperature	150°C
Mounting Type	Surface Mount
Supplier Device Package	ES6
Package / Case	SOT-563, SOT-666
Weight	-
Country of Origin	-

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