SSM6J216FE,LF

SSM6J216FE,LF - Toshiba Semiconductor and Storage

Part Number
SSM6J216FE,LF
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
MOSFET P-CHANNEL 12V 4.8A ES6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
SSM6J216FE,LF PDF online browsing
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-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
1247350 pcs
Reference Price
USD 0.132/pcs
Our Price
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SSM6J216FE,LF Detailed Description

Part Number SSM6J216FE,LF
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 4.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 32 mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 12.7nC @ 4.5V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 1040pF @ 12V
FET Feature -
Power Dissipation (Max) 700mW (Ta)
Operating Temperature 150°C
Mounting Type Surface Mount
Supplier Device Package ES6
Package / Case SOT-563, SOT-666
Weight -
Country of Origin -

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