SSM6J206FE(TE85L,F - Toshiba Semiconductor and Storage

Part Number	SSM6J206FE(TE85L,F
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	2A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	1.8V, 4V
Vgs(th) (Max) @ Id	1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	335pF @ 10V
Vgs (Max)	±8V
FET Feature	-
Power Dissipation (Max)	500mW (Ta)
Rds On (Max) @ Id, Vgs	130 mOhm @ 1A, 4V
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	ES6 (1.6x1.6)
Package / Case	SOT-563, SOT-666
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
SSM6J206FE	TOSHIBA	SSM6J206FE TOSHIBA ES6 New Original Stocks	Details
SSM6J206FE(TE85L,F	Toshiba Semiconductor and Storage	MOSFET P-CH 20V 2A ES6	Details
SSM6J207FE,LF	Toshiba Semiconductor and Storage	MOSFET P-CH 30V 1.4A ES6	Details
SSM6J212FE,LF	Toshiba Semiconductor and Storage	MOSFET P-CH 20V 4A ES6	Details
SSM6J213FE(TE85L,F	Toshiba Semiconductor and Storage	MOSFET P CH 20V 2.6A ES6	Details
SSM6J214FE(TE85L,F	Toshiba Semiconductor and Storage	X34 SMALL LOW ON RESISTANCE PCH	Details
SSM6J215FE(TE85L,F	Toshiba Semiconductor and Storage	MOSFET P CH 20V 3.4A ES6	Details
SSM6J216FE,LF	Toshiba Semiconductor and Storage	MOSFET P-CHANNEL 12V 4.8A ES6	Details
SSM6J21TU	TOS	SSM6J21TU TOS UF6 New Original Stocks	Details
SSM6J25FE	TOSHIBA	SSM6J25FE TOSHIBA SOT-6 New Original Stocks	Details