SSM6J213FE(TE85L,F - Toshiba Semiconductor and Storage

Part Number	SSM6J213FE(TE85L,F
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	2.6A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	1.5V, 4.5V
Vgs(th) (Max) @ Id	1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	4.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	290pF @ 10V
Vgs (Max)	±8V
FET Feature	-
Power Dissipation (Max)	500mW (Ta)
Rds On (Max) @ Id, Vgs	103 mOhm @ 1.5A, 4.5V
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	ES6
Package / Case	SOT-563, SOT-666
Weight	-
Country of Origin	-

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