HN3C10FUTE85LF - Toshiba Semiconductor and Storage

Part Number	HN3C10FUTE85LF
Part Status	Active
Transistor Type	2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	7GHz
Noise Figure (dB Typ @ f)	1.1dB @ 1GHz
Gain	11.5dB
Power - Max	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 20mA, 10V
Current - Collector (Ic) (Max)	80mA
Operating Temperature	-
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Supplier Device Package	US6
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
HN3C10F	TOSHIBA	HN3C10F TOSHIBA SOT-36.. New Original Stocks	Details
HN3C10FU(TE85L)	TOSHIBA	HN3C10FU(TE85L) TOSHIBA SOT363 New Original Stocks	Details
HN3C10FUTE85LF	Toshiba Semiconductor and Storage	TRANSISTOR NPN US6	Details
HN3C12FT	TOS	HN3C12FT TOS SOT New Original Stocks	Details
HN3C12FU	TOSHIBA	HN3C12FU TOSHIBA SOT363 New Original Stocks	Details