HN3C10FUTE85LF

HN3C10FUTE85LF - Toshiba Semiconductor and Storage

Part Number
HN3C10FUTE85LF
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
TRANSISTOR NPN US6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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-
Category
Transistors - Bipolar (BJT) - RF
Delivery Time
1 Day
Date Code
New
Stock Quantity
4061 pcs
Reference Price
USD 0/pcs
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HN3C10FUTE85LF Detailed Description

Part Number HN3C10FUTE85LF
Part Status Active
Transistor Type 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max) 12V
Frequency - Transition 7GHz
Noise Figure (dB Typ @ f) 1.1dB @ 1GHz
Gain 11.5dB
Power - Max 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 20mA, 10V
Current - Collector (Ic) (Max) 80mA
Operating Temperature -
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package US6
Weight -
Country of Origin -

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