BS2103F-E2 - Rohm Semiconductor

Part Number	BS2103F-E2
Part Status	Active
Driven Configuration	Half-Bridge
Channel Type	Independent
Number of Drivers	2
Gate Type	IGBT, N-Channel MOSFET
Voltage - Supply	10 V ~ 18 V
Logic Voltage - VIL, VIH	1V, 2.6V
Current - Peak Output (Source, Sink)	60mA, 130mA
Input Type	Non-Inverting
High Side Voltage - Max (Bootstrap)	600V
Rise / Fall Time (Typ)	200ns, 100ns
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.173", 4.40mm Width)
Supplier Device Package	8-SOP
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
BS2100F-E2	Rohm Semiconductor	IC DVR IGBT/MOSFET	Details
BS2101F-E2	Rohm Semiconductor	600V HIGH VOLTAGE HIGH LOW-SID	Details
BS2103F-E2	Rohm Semiconductor	IC GATE DRVR HALF-BRIDGE 8SOP	Details
BS2130F-GE2	Rohm Semiconductor	600V HIGH VOLTAGE 3 PHASE BRIDGE	Details
BS21P-SHF-1AA(LF)(SN)	JST Sales America Inc.	CONN HEADER R/A 21POS 2.5MM	Details