| Part Number | MJD31C1G |
|---|---|
| Part Status | Active |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 3A |
| Voltage - Collector Emitter Breakdown (Max) | 100V |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 375mA, 3A |
| Current - Collector Cutoff (Max) | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 3A, 4V |
| Power - Max | 1.56W |
| Frequency - Transition | 3MHz |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Supplier Device Package | I-Pak |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
 |
MJD112 | FAIRC | MJD112 FAIRC TO-252.. New Original Stocks | Details |
|
MJD112-001 | ON Semiconductor | TRANS NPN DARL 100V 2A IPAK | Details |
|
MJD112-1G | ON Semiconductor | TRANS NPN DARL 100V 2A IPAK | Details |
|
MJD112-RTF/E5 | ON | MJD112-RTF/E5 ON TO-252 New Original Stocks | Details |
 |
MJD112-TP | Micro Commercial Co | TRANS NPN 100V 2A DPAK | Details |
 |
MJD112G | ON Semiconductor | TRANS NPN DARL 100V 2A DPAK | Details |
|
MJD112L | KEC | EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.) | Details |
|
MJD112RL | ON Semiconductor | TRANS NPN DARL 100V 2A DPAK | Details |
|
MJD112RLG | ON Semiconductor | TRANS NPN DARL 100V 2A DPAK | Details |
|
MJD112T4 | ON Semiconductor | TRANS NPN DARL 100V 2A DPAK | Details |
