| Part Number | MJD112G |
|---|---|
| Part Status | Active |
| Transistor Type | NPN - Darlington |
| Current - Collector (Ic) (Max) | 2A |
| Voltage - Collector Emitter Breakdown (Max) | 100V |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 40mA, 4A |
| Current - Collector Cutoff (Max) | 20µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 2A, 3V |
| Power - Max | 1.75W |
| Frequency - Transition | 25MHz |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | DPAK-3 |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
 |
MJD112 | FAIRC | MJD112 FAIRC TO-252.. New Original Stocks | Details |
 |
MJD112-001 | ON Semiconductor | TRANS NPN DARL 100V 2A IPAK | Details |
|
MJD112-1G | ON Semiconductor | TRANS NPN DARL 100V 2A IPAK | Details |
|
MJD112-RTF/E5 | ON | MJD112-RTF/E5 ON TO-252 New Original Stocks | Details |
 |
MJD112-TP | Micro Commercial Co | TRANS NPN 100V 2A DPAK | Details |
|
MJD112G | ON Semiconductor | TRANS NPN DARL 100V 2A DPAK | Details |
|
MJD112L | KEC | EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.) | Details |
|
MJD112RL | ON Semiconductor | TRANS NPN DARL 100V 2A DPAK | Details |
|
MJD112RLG | ON Semiconductor | TRANS NPN DARL 100V 2A DPAK | Details |
|
MJD112T4 | ON Semiconductor | TRANS NPN DARL 100V 2A DPAK | Details |
