MJD112-1G - ON Semiconductor

Part Number	MJD112-1G
Part Status	Active
Transistor Type	NPN - Darlington
Current - Collector (Ic) (Max)	2A
Voltage - Collector Emitter Breakdown (Max)	100V
Vce Saturation (Max) @ Ib, Ic	3V @ 40mA, 4A
Current - Collector Cutoff (Max)	20µA
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 2A, 3V
Power - Max	1.75W
Frequency - Transition	25MHz
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package	I-Pak
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
MJD112	FAIRC	MJD112 FAIRC TO-252.. New Original Stocks	Details
MJD112-001	ON Semiconductor	TRANS NPN DARL 100V 2A IPAK	Details
MJD112-1G	ON Semiconductor	TRANS NPN DARL 100V 2A IPAK	Details
MJD112-RTF/E5	ON	MJD112-RTF/E5 ON TO-252 New Original Stocks	Details
MJD112-TP	Micro Commercial Co	TRANS NPN 100V 2A DPAK	Details
MJD112G	ON Semiconductor	TRANS NPN DARL 100V 2A DPAK	Details
MJD112L	KEC	EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)	Details
MJD112RL	ON Semiconductor	TRANS NPN DARL 100V 2A DPAK	Details
MJD112RLG	ON Semiconductor	TRANS NPN DARL 100V 2A DPAK	Details
MJD112T4	ON Semiconductor	TRANS NPN DARL 100V 2A DPAK	Details