| Número de pieza | MJD112-1G |
|---|---|
| Estado de la pieza | Active |
| Tipo de transistor | NPN - Darlington |
| Current - Collector (Ic) (Max) | 2A |
| Voltaje: ruptura del emisor del colector (máximo) | 100V |
| Saturación de Vce (Máx) @ Ib, Ic | 3V @ 40mA, 4A |
| Corriente - corte de colector (máximo) | 20µA |
| Ganancia de corriente CC (hFE) (Min) @ Ic, Vce | 1000 @ 2A, 3V |
| Potencia - Max | 1.75W |
| Frecuencia - Transición | 25MHz |
| Temperatura de funcionamiento | -65°C ~ 150°C (TJ) |
| Tipo de montaje | Through Hole |
| Paquete / caja | TO-251-3 Short Leads, IPak, TO-251AA |
| Paquete de dispositivo del proveedor | I-Pak |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
 |
MJD112 | FAIRC | MJD112 FAIRC TO-252.. New Original Stocks | Detalles |
|
MJD112-001 | ON Semiconductor | TRANS NPN DARL 100V 2A IPAK | Detalles |
|
MJD112-1G | ON Semiconductor | TRANS NPN DARL 100V 2A IPAK | Detalles |
|
MJD112-RTF/E5 | ON | MJD112-RTF/E5 ON TO-252 New Original Stocks | Detalles |
 |
MJD112-TP | Micro Commercial Co | TRANS NPN 100V 2A DPAK | Detalles |
 |
MJD112G | ON Semiconductor | TRANS NPN DARL 100V 2A DPAK | Detalles |
|
MJD112L | KEC | EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.) | Detalles |
|
MJD112RL | ON Semiconductor | TRANS NPN DARL 100V 2A DPAK | Detalles |
|
MJD112RLG | ON Semiconductor | TRANS NPN DARL 100V 2A DPAK | Detalles |
|
MJD112T4 | ON Semiconductor | TRANS NPN DARL 100V 2A DPAK | Detalles |
