PMPB12UN,115 - NXP USA Inc.

Part Number	PMPB12UN,115
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	7.9A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	1.8V, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	13nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	886pF @ 10V
Vgs (Max)	±8V
FET Feature	-
Power Dissipation (Max)	1.7W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs	18 mOhm @ 7.9A, 4.5V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-DFN2020MD (2x2)
Package / Case	6-UDFN Exposed Pad
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
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PMPB100ENEX	Nexperia USA Inc.	PMPB100ENE/SOT1220/SOT1220	Details
PMPB100XPEAX	Nexperia USA Inc.	MOSFET P-CH 20V 3.2A 6DFN2020MD	Details
PMPB10XNE,115	Nexperia USA Inc.	MOSFET N-CH 20V 9A 6DFN	Details
PMPB10XNEAX	Nexperia USA Inc.	PMPB10XNEA/SOT1220/SOT1220	Details
PMPB10XNEZ	Nexperia USA Inc.	MOSFET N-CH 20V SOT1220	Details
PMPB11EN,115	Nexperia USA Inc.	MOSFET N-CH 30V 9A 6DFN	Details
PMPB12UN,115	NXP USA Inc.	MOSFET N-CH 20V 7.9A 6DFN	Details
PMPB12UNEAX	Nexperia USA Inc.	PMPB12UNEA/SOT1220/SOT1220	Details
PMPB12UNEX	Nexperia USA Inc.	MOSFET N-CH 20V SOT1220	Details