PMPB100XPEAX - Nexperia USA Inc.

Part Number	PMPB100XPEAX
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	3V, 4.5V
Rds On (Max) @ Id, Vgs	122 mOhm @ 3.2A, 4.5V
Vgs(th) (Max) @ Id	1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	5nC @ 4.5V
Vgs (Max)	+8V, -10V
Input Capacitance (Ciss) (Max) @ Vds	388pF @ 10V
FET Feature	-
Power Dissipation (Max)	550mW (Ta)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-DFN2020MD (2x2)
Package / Case	6-UDFN Exposed Pad
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
PMPB100ENEAX	Nexperia USA Inc.	PMPB100ENEA/SOT1220/SOT1220	Details
PMPB100ENEX	Nexperia USA Inc.	PMPB100ENE/SOT1220/SOT1220	Details
PMPB100XPEAX	Nexperia USA Inc.	MOSFET P-CH 20V 3.2A 6DFN2020MD	Details
PMPB10XNE,115	Nexperia USA Inc.	MOSFET N-CH 20V 9A 6DFN	Details
PMPB10XNEAX	Nexperia USA Inc.	PMPB10XNEA/SOT1220/SOT1220	Details
PMPB10XNEZ	Nexperia USA Inc.	MOSFET N-CH 20V SOT1220	Details
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PMPB12UN,115	NXP USA Inc.	MOSFET N-CH 20V 7.9A 6DFN	Details
PMPB12UNEAX	Nexperia USA Inc.	PMPB12UNEA/SOT1220/SOT1220	Details
PMPB12UNEX	Nexperia USA Inc.	MOSFET N-CH 20V SOT1220	Details