PMPB11EN,115 - Nexperia USA Inc.

Part Number	PMPB11EN,115
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	9A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	4.5V, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	20.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	840pF @ 10V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	1.7W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs	14.5 mOhm @ 9A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-DFN2020MD (2x2)
Package / Case	6-UDFN Exposed Pad
Weight	-
Country of Origin	-

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