APT70SM70B - Microsemi Corporation

Part Number	APT70SM70B
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	700V
Current - Continuous Drain (Id) @ 25°C	65A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	20V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	125nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds	-
Vgs (Max)	+25V, -10V
FET Feature	-
Power Dissipation (Max)	300W (Tc)
Rds On (Max) @ Id, Vgs	70 mOhm @ 32.5A, 20V
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247 [B]
Package / Case	TO-247-3
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
APT70GR120B2	Microsemi Corporation	IGBT 1200V 160A 961W TO247	Details
APT70GR120J	Microsemi Corporation	IGBT 1200V 112A 543W SOT227	Details
APT70GR120JD60	Microsemi Corporation	IGBT 1200V 112A 543W SOT227	Details
APT70GR120L	Microsemi Corporation	IGBT 1200V 160A 961W TO264	Details
APT70GR65B	Microsemi Corporation	IGBT 650V 134A 595W TO-247	Details
APT70GR65B2DU40	Microsemi Corporation	INSULATED GATE BIPOLAR TRANSISTO	Details
APT70GR65B2SCD30	Microsemi Corporation	INSULATED GATE BIPOLAR TRANSISTO	Details
APT70SM70B	Microsemi Corporation	POWER MOSFET - SIC	Details
APT70SM70J	Microsemi Corporation	POWER MOSFET - SIC	Details
APT70SM70S	Microsemi Corporation	POWER MOSFET - SIC	Details