| Part Number | APT70SM70B |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 700V |
| Current - Continuous Drain (Id) @ 25°C | 65A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 20V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 125nC @ 20V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Vgs (Max) | +25V, -10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Rds On (Max) @ Id, Vgs | 70 mOhm @ 32.5A, 20V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247 [B] |
| Package / Case | TO-247-3 |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
 |
APT70GR120B2 | Microsemi Corporation | IGBT 1200V 160A 961W TO247 | Details |
 |
APT70GR120J | Microsemi Corporation | IGBT 1200V 112A 543W SOT227 | Details |
|
APT70GR120JD60 | Microsemi Corporation | IGBT 1200V 112A 543W SOT227 | Details |
 |
APT70GR120L | Microsemi Corporation | IGBT 1200V 160A 961W TO264 | Details |
|
APT70GR65B | Microsemi Corporation | IGBT 650V 134A 595W TO-247 | Details |
|
APT70GR65B2DU40 | Microsemi Corporation | INSULATED GATE BIPOLAR TRANSISTO | Details |
|
APT70GR65B2SCD30 | Microsemi Corporation | INSULATED GATE BIPOLAR TRANSISTO | Details |
|
APT70SM70B | Microsemi Corporation | POWER MOSFET - SIC | Details |
|
APT70SM70J | Microsemi Corporation | POWER MOSFET - SIC | Details |
|
APT70SM70S | Microsemi Corporation | POWER MOSFET - SIC | Details |
