APT70GR120J - Microsemi Corporation

Part Number	APT70GR120J
Part Status	Active
IGBT Type	NPT
Configuration	Single
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	112A
Power - Max	543W
Vce(on) (Max) @ Vge, Ic	3.2V @ 15V, 70A
Current - Collector Cutoff (Max)	1mA
Input Capacitance (Cies) @ Vce	7.26nF @ 25V
Input	Standard
NTC Thermistor	No
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	SOT-227-4
Supplier Device Package	SOT-227
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
APT70GR120B2	Microsemi Corporation	IGBT 1200V 160A 961W TO247	Details
APT70GR120J	Microsemi Corporation	IGBT 1200V 112A 543W SOT227	Details
APT70GR120JD60	Microsemi Corporation	IGBT 1200V 112A 543W SOT227	Details
APT70GR120L	Microsemi Corporation	IGBT 1200V 160A 961W TO264	Details
APT70GR65B	Microsemi Corporation	IGBT 650V 134A 595W TO-247	Details
APT70GR65B2DU40	Microsemi Corporation	INSULATED GATE BIPOLAR TRANSISTO	Details
APT70GR65B2SCD30	Microsemi Corporation	INSULATED GATE BIPOLAR TRANSISTO	Details
APT70SM70B	Microsemi Corporation	POWER MOSFET - SIC	Details
APT70SM70J	Microsemi Corporation	POWER MOSFET - SIC	Details
APT70SM70S	Microsemi Corporation	POWER MOSFET - SIC	Details