| Part Number | APT70GR120JD60 |
|---|---|
| Part Status | Active |
| IGBT Type | NPT |
| Configuration | Single |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 112A |
| Power - Max | 543W |
| Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 70A |
| Current - Collector Cutoff (Max) | 1.1mA |
| Input Capacitance (Cies) @ Vce | 7.26nF @ 25V |
| Input | Standard |
| NTC Thermistor | No |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | SOT-227-4 |
| Supplier Device Package | SOT-227 |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
 |
APT70GR120B2 | Microsemi Corporation | IGBT 1200V 160A 961W TO247 | Details |
|
APT70GR120J | Microsemi Corporation | IGBT 1200V 112A 543W SOT227 | Details |
|
APT70GR120JD60 | Microsemi Corporation | IGBT 1200V 112A 543W SOT227 | Details |
 |
APT70GR120L | Microsemi Corporation | IGBT 1200V 160A 961W TO264 | Details |
|
APT70GR65B | Microsemi Corporation | IGBT 650V 134A 595W TO-247 | Details |
 |
APT70GR65B2DU40 | Microsemi Corporation | INSULATED GATE BIPOLAR TRANSISTO | Details |
|
APT70GR65B2SCD30 | Microsemi Corporation | INSULATED GATE BIPOLAR TRANSISTO | Details |
|
APT70SM70B | Microsemi Corporation | POWER MOSFET - SIC | Details |
|
APT70SM70J | Microsemi Corporation | POWER MOSFET - SIC | Details |
|
APT70SM70S | Microsemi Corporation | POWER MOSFET - SIC | Details |
