| Número de pieza | APT70GR120JD60 |
|---|---|
| Estado de la pieza | Active |
| Tipo de IGBT | NPT |
| Configuración | Single |
| Voltaje: ruptura del emisor del colector (máximo) | 1200V |
| Current - Collector (Ic) (Max) | 112A |
| Potencia - Max | 543W |
| Vce (on) (Max) @ Vge, Ic | 3.2V @ 15V, 70A |
| Corriente - corte de colector (máximo) | 1.1mA |
| Capacitancia de entrada (Cies) @ Vce | 7.26nF @ 25V |
| Entrada | Standard |
| Termistor NTC | No |
| Temperatura de funcionamiento | -55°C ~ 150°C (TJ) |
| Tipo de montaje | Chassis Mount |
| Paquete / caja | SOT-227-4 |
| Paquete de dispositivo del proveedor | SOT-227 |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
 |
APT70GR120B2 | Microsemi Corporation | IGBT 1200V 160A 961W TO247 | Detalles |
|
APT70GR120J | Microsemi Corporation | IGBT 1200V 112A 543W SOT227 | Detalles |
|
APT70GR120JD60 | Microsemi Corporation | IGBT 1200V 112A 543W SOT227 | Detalles |
 |
APT70GR120L | Microsemi Corporation | IGBT 1200V 160A 961W TO264 | Detalles |
|
APT70GR65B | Microsemi Corporation | IGBT 650V 134A 595W TO-247 | Detalles |
 |
APT70GR65B2DU40 | Microsemi Corporation | INSULATED GATE BIPOLAR TRANSISTO | Detalles |
|
APT70GR65B2SCD30 | Microsemi Corporation | INSULATED GATE BIPOLAR TRANSISTO | Detalles |
|
APT70SM70B | Microsemi Corporation | POWER MOSFET - SIC | Detalles |
|
APT70SM70J | Microsemi Corporation | POWER MOSFET - SIC | Detalles |
|
APT70SM70S | Microsemi Corporation | POWER MOSFET - SIC | Detalles |
