SI1079X-T1-GE3 Detailed Description
Part Number |
SI1079X-T1-GE3 |
Part Status |
Active |
FET Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
30V |
Current - Continuous Drain (Id) @ 25°C |
1.44A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
2.5V, 4.5V |
Rds On (Max) @ Id, Vgs |
100 mOhm @ 1.4A, 4.5V |
Vgs(th) (Max) @ Id |
1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
26nC @ 10V |
Vgs (Max) |
±12V |
Input Capacitance (Ciss) (Max) @ Vds |
750pF @ 15V |
FET Feature |
- |
Power Dissipation (Max) |
330mW (Ta) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
SC-89-6 |
Package / Case |
SOT-563, SOT-666 |
Weight |
- |
Country of Origin |
- |
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