| Part Number | SI1071X-T1-GE3 |
|---|---|
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V, 10V |
| Vgs(th) (Max) @ Id | 1.45V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 13.3nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 315pF @ 15V |
| Vgs (Max) | ±12V |
| FET Feature | - |
| Power Dissipation (Max) | 236mW (Ta) |
| Rds On (Max) @ Id, Vgs | 167 mOhm @ 960mA, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SC-89-6 |
| Package / Case | SOT-563, SOT-666 |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
 |
SI1070X | VISHAY | N-Channel 30-V (D-S) MOSFET | Details |
|
SI1070X-T1-E3 | Vishay Siliconix | MOSFET N-CH 30V 1.2A SOT563F | Details |
|
SI1070X-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 1.2A SOT563F | Details |
|
SI1071X | VISHAY | P-Channel 30-V (D-S) MOSFET | Details |
|
SI1071X-T1-E3 | Vishay Siliconix | MOSFET P-CH 30V 0.96A SOT563F | Details |
|
SI1071X-T1-GE3 | Vishay Siliconix | MOSFET P-CH 30V 0.96A SC89-6 | Details |
|
SI1072X-T1-E3 | Vishay Siliconix | MOSFET N-CH 30V 1.3A SOT563F | Details |
|
SI1072X-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V SC89 | Details |
|
SI1073X | VISHAY | P-Channel 30-V (D-S) MOSFET | Details |
|
SI1073X-T1-E3 | Vishay Siliconix | MOSFET P-CH 30V 0.98A SC89-6 | Details |
