SI1070X-T1-GE3 - Vishay Siliconix

Part Number	SI1070X-T1-GE3
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	-
Drive Voltage (Max Rds On,Min Rds On)	2.5V, 4.5V
Vgs(th) (Max) @ Id	1.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	385pF @ 15V
Vgs (Max)	±12V
FET Feature	-
Power Dissipation (Max)	236mW (Ta)
Rds On (Max) @ Id, Vgs	99 mOhm @ 1.2A, 4.5V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SC-89-6
Package / Case	SOT-563, SOT-666
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
SI1070X	VISHAY	N-Channel 30-V (D-S) MOSFET	Details
SI1070X-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 1.2A SOT563F	Details
SI1070X-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 1.2A SOT563F	Details
SI1071X	VISHAY	P-Channel 30-V (D-S) MOSFET	Details
SI1071X-T1-E3	Vishay Siliconix	MOSFET P-CH 30V 0.96A SOT563F	Details
SI1071X-T1-GE3	Vishay Siliconix	MOSFET P-CH 30V 0.96A SC89-6	Details
SI1072X-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 1.3A SOT563F	Details
SI1072X-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V SC89	Details
SI1073X	VISHAY	P-Channel 30-V (D-S) MOSFET	Details
SI1073X-T1-E3	Vishay Siliconix	MOSFET P-CH 30V 0.98A SC89-6	Details