APT94N65B2C6 - Microsemi Corporation

Part Number	APT94N65B2C6
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	95A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	3.5V @ 3.5mA
Gate Charge (Qg) (Max) @ Vgs	320nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	8140pF @ 25V
Vgs (Max)	±20V
FET Feature	Super Junction
Power Dissipation (Max)	833W (Tc)
Rds On (Max) @ Id, Vgs	35 mOhm @ 35.2A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	T-MAX™ [B2]
Package / Case	TO-247-3 Variant
Weight	-
Country of Origin	-

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