| Part Number | APT97N65LC6 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 97A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 2.96mA |
| Gate Charge (Qg) (Max) @ Vgs | 300nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 7650pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 862W (Tc) |
| Rds On (Max) @ Id, Vgs | 41 mOhm @ 48.5A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-264 [L] |
| Package / Case | TO-264-3, TO-264AA |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
 |
APT90DR160HJ | Microsemi Corporation | DIODE MODULE 1.6V SOT227 | Details |
 |
APT94N60L2C3G | Microsemi Corporation | MOSFET N-CH 600V 94A TO264 | Details |
 |
APT94N65B2C3G | Microsemi Corporation | MOSFET N-CH 650V 94A TO-247 | Details |
|
APT94N65B2C6 | Microsemi Corporation | MOSFET N-CH 650V 95A T-MAX | Details |
 |
APT95GR65B2 | Microsemi Corporation | IGBT 650V 208A 892W T-MAX | Details |
|
APT95GR65JDU60 | Microsemi Corporation | INSULATED GATE BIPOLAR TRANSISTO | Details |
|
APT97N65LC6 | Microsemi Corporation | MOSFET N-CH 650V 97A TO-264 | Details |
|
APT9F100B | Microsemi Corporation | MOSFET N-CH 1000V 9A TO-247 | Details |
 |
APT9F100S | Microsemi Corporation | MOSFET N-CH 1000V 9A D3PAK | Details |
|
APT9M100B | Microsemi Corporation | MOSFET N-CH 1000V 9A TO-247 | Details |
