APT94N65B2C3G - Microsemi Corporation

Part Number	APT94N65B2C3G
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	94A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	3.9V @ 5.8mA
Gate Charge (Qg) (Max) @ Vgs	580nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	13940pF @ 25V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	833W (Tc)
Rds On (Max) @ Id, Vgs	35 mOhm @ 47A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	T-MAX™ [B2]
Package / Case	TO-247-3 Variant
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
APT94N60L2C3G	Microsemi Corporation	MOSFET N-CH 600V 94A TO264	Details
APT94N65B2C3G	Microsemi Corporation	MOSFET N-CH 650V 94A TO-247	Details
APT94N65B2C6	Microsemi Corporation	MOSFET N-CH 650V 95A T-MAX	Details