APT200GN60B2G - Microsemi Corporation

Part Number	APT200GN60B2G
Part Status	Active
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	283A
Current - Collector Pulsed (Icm)	600A
Vce(on) (Max) @ Vge, Ic	1.85V @ 15V, 200A
Power - Max	682W
Switching Energy	13mJ (on), 11mJ (off)
Input Type	Standard
Gate Charge	1180nC
Td (on/off) @ 25°C	50ns/560ns
Test Condition	400V, 200A, 1 Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	-
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
APT200GN60B2G	Microsemi Corporation	IGBT 600V 283A 682W TO247	Details
APT200GN60J	Microsemi Corporation	IGBT 600V 283A 682W SOT227	Details
APT200GN60JDQ4	Microsemi Corporation	IGBT 600V 283A 682W SOT227	Details
APT200GN60JDQ4G	Microsemi Corporation	IGBT 600V 283A 682W SOT227	Details
APT200GN60JG	Microsemi Corporation	IGBT 600V 283A 682W SOT227	Details
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