| Part Number | IRF6100PBF |
|---|---|
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 5.1A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 21nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1230pF @ 15V |
| Vgs (Max) | ±12V |
| FET Feature | - |
| Power Dissipation (Max) | 2.2W (Ta) |
| Rds On (Max) @ Id, Vgs | 65 mOhm @ 5.1A, 4.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 4-FlipFet™ |
| Package / Case | 4-FlipFet™ |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
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IRF60B217 | Infineon Technologies | MOSFET N-CH 60V 60A | Details |
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IRF60DM206 | Infineon Technologies | MOSFET N-CH 60V 130A | Details |
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IRF60R217 | Infineon Technologies | MOSFET N-CH 60V 58A | Details |
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IRF610 | Vishay Siliconix | MOSFET N-CH 200V 3.3A TO-220AB | Details |
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IRF6100 | Infineon Technologies | MOSFET P-CH 20V 5.1A FLIP-FET | Details |
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IRF6100PBF | Infineon Technologies | MOSFET P-CH 20V 5.1A FLIPFET | Details |
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IRF610L | Vishay Siliconix | MOSFET N-CH 200V 3.3A TO-262 | Details |
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IRF610LPBF | Vishay Siliconix | MOSFET N-CH 200V 3.3A TO-262 | Details |
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IRF610PBF | Vishay Siliconix | MOSFET N-CH 200V 3.3A TO-220AB | Details |
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IRF610S | Vishay Siliconix | MOSFET N-CH 200V 3.3A D2PAK | Details |
