IRF610S

IRF610S - Vishay Siliconix

Part Number
IRF610S
Manufacturer
Vishay Siliconix
Brief Description
MOSFET N-CH 200V 3.3A D2PAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
IRF610S PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
3543 pcs
Reference Price
USD 0/pcs
Our Price
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IRF610S Detailed Description

Part Number IRF610S
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 3.3A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 140pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 3W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs 1.5 Ohm @ 2A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Weight -
Country of Origin -

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