SI8900EDB-T2-E1 Detailed Description
Part Number |
SI8900EDB-T2-E1 |
Part Status |
Active |
FET Type |
2 N-Channel (Dual) Common Drain |
FET Feature |
Logic Level Gate |
Drain to Source Voltage (Vdss) |
20V |
Current - Continuous Drain (Id) @ 25°C |
5.4A |
Rds On (Max) @ Id, Vgs |
- |
Vgs(th) (Max) @ Id |
1V @ 1.1mA |
Gate Charge (Qg) (Max) @ Vgs |
- |
Input Capacitance (Ciss) (Max) @ Vds |
- |
Power - Max |
1W |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Package / Case |
10-UFBGA, CSPBGA |
Supplier Device Package |
10-Micro Foot™ CSP (2x5) |
Weight |
- |
Country of Origin |
- |
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