SI3127DV-T1-GE3 - Vishay Siliconix

Part Number	SI3127DV-T1-GE3
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	3.5A (Ta), 13A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	4.5V, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	833pF @ 20V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	2W (Ta), 4.2W (Tc)
Rds On (Max) @ Id, Vgs	89 mOhm @ 1.5A, 4.5V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-TSOP
Package / Case	SOT-23-6 Thin, TSOT-23-6
Weight	-
Country of Origin	-

Image	Part Number	Manufacturers	Description	View
	SI3120DY-T1-E3	VISHAY	SI3120DY-T1-E3 VISHAY SOP-8 New Original Stocks	Details
	SI3127DV-T1-GE3	Vishay Siliconix	MOSFET P-CHAN 60V TSOP6S	Details