TPN7R506NH,L1Q - Toshiba Semiconductor and Storage

Part Number	TPN7R506NH,L1Q
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	26A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	6.5V, 10V
Vgs(th) (Max) @ Id	4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs	22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1800pF @ 30V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	700mW (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs	7.5 mOhm @ 13A, 10V
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-TSON Advance (3.3x3.3)
Package / Case	8-PowerVDFN
Weight	-
Country of Origin	-