TPCP8J01(TE85L,F,M - Toshiba Semiconductor and Storage

Part Number	TPCP8J01(TE85L,F,M
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	32V
Current - Continuous Drain (Id) @ 25°C	5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Rds On (Max) @ Id, Vgs	35 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	34nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1760pF @ 10V
FET Feature	-
Power Dissipation (Max)	2.14W (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PS-8
Package / Case	8-SMD, Flat Lead
Weight	-
Country of Origin	-

Image	Part Number	Manufacturers	Description	View
	TPCP8J01	TOSHIBA	TPCP8J01 TOSHIBA SOT23-.. New Original Stocks	Details
	TPCP8J01(TE85L,F,M	Toshiba Semiconductor and Storage	X35 PB-FREE POWER MOSFET TRANSIS	Details