TSM900N06CW RPG - Taiwan Semiconductor Corporation

Part Number	TSM900N06CW RPG
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	90 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	9.3nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	500pF @ 15V
FET Feature	-
Power Dissipation (Max)	25W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-223
Package / Case	TO-261-4, TO-261AA
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
TSM900N06CH X0G	Taiwan Semiconductor Corporation	MOSFET N-CHANNEL 60V 11A TO251	Details
TSM900N06CP ROG	Taiwan Semiconductor Corporation	MOSFET N-CHANNEL 60V 11A TO252	Details
TSM900N06CW RPG	Taiwan Semiconductor Corporation	MOSFET N-CHANNEL 60V 11A SOT223	Details
TSM900N10CH X0G	Taiwan Semiconductor Corporation	MOSFET N-CH 100V 15A TO251	Details
TSM900N10CP ROG	Taiwan Semiconductor Corporation	MOSFET N-CHANNEL 100V 15A TO252	Details