RSR010N10TL - Rohm Semiconductor

Part Number	RSR010N10TL
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	1A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	4V, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	3.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	140pF @ 25V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	540mW (Ta)
Rds On (Max) @ Id, Vgs	520 mOhm @ 1A, 10V
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TSMT3
Package / Case	SC-96
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
RSR010N10	R	RSR010N10 R SOT-23 New Original Stocks	Details
RSR010N10TL	Rohm Semiconductor	MOSFET N-CH 100V 1.0A TSMT3	Details
RSR015P02	R	RSR015P02 R SOT23 New Original Stocks	Details
RSR015P03	ROHM	4V Drive Pch MOS FET	Details
RSR015P03TL	Rohm Semiconductor	MOSFET P-CH 30V 1.5A TSMT3	Details
RSR020N06	ROHM	4V Drive Nch MOS FET	Details
RSR020N06FSTL	ROHM	RSR020N06FSTL ROHM SOT-23 New Original Stocks	Details
RSR020N06TL	Rohm Semiconductor	MOSFET N-CH 60V 2A TSMT3	Details
RSR020P03	R	RSR020P03 R SOT23 New Original Stocks	Details
RSR020P03TL	Rohm Semiconductor	MOSFET P-CH 30V 2A TSMT3	Details