RSR020N06TL - Rohm Semiconductor

Part Number	RSR020N06TL
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	2A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	4V, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	4.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	180pF @ 10V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	540mW (Ta)
Rds On (Max) @ Id, Vgs	170 mOhm @ 2A, 10V
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TSMT3
Package / Case	SC-96
Weight	-
Country of Origin	-

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