SSR1N60BTM-WS - ON Semiconductor

Part Number	SSR1N60BTM-WS
Part Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	900mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	12 Ohm @ 450mA, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	7.7nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	215pF @ 25V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 28W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D-Pak
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
SSR1N60BTM	Fairchild/ON Semiconductor	MOSFET N-CH 600V 0.9A DPAK	Details
SSR1N60BTM-WS	ON Semiconductor	MOSFET N-CH 600V 0.9A DPAK	Details
SSR1N60BTM_F080	Fairchild/ON Semiconductor	MOSFET N-CH 600V 0.9A DPAK	Details
SSR1N60BTM_WS	Fairchild/ON Semiconductor	MOSFET N-CH 600V 0.9A DPAK	Details