2N7000,126 - NXP USA Inc.

Part Number	2N7000,126
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	300mA (Tc)
Drive Voltage (Max Rds On,Min Rds On)	4.5V, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	40pF @ 10V
Vgs (Max)	±30V
FET Feature	-
Power Dissipation (Max)	830mW (Ta)
Rds On (Max) @ Id, Vgs	5 Ohm @ 500mA, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-92-3
Package / Case	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
2N7000	Fairchild/ON Semiconductor	MOSFET N-CH 60V 200MA TO-92	Details
2N7000,126	NXP USA Inc.	MOSFET N-CH 60V 300MA TO-92	Details
2N7000-D26Z	ON Semiconductor	MOSFET N-CH 60V 200MA TO-92	Details
2N7000-D74Z	ON Semiconductor	MOSFET N-CH 60V 200MA TO-92	Details
2N7000-D75Z	ON Semiconductor	MOSFET N-CH 60V 200MA TO-92	Details
2N7000-G	Microchip Technology	MOSFET N-CH 60V 0.2A TO92-3	Details
2N7000BU	Fairchild/ON Semiconductor	MOSFET N-CH 60V 0.2A TO-92	Details
2N7000BU_T	ON Semiconductor	MOSFET N-CH 60V TO92	Details
2N7000CSM	SEME-LAB	N.CHANNEL ENHANCEMENT MODE MOS TRANSISTOR	Details
2N7000G	ON Semiconductor	MOSFET N-CH 60V 200MA TO-92	Details