2N7000 - Fairchild/ON Semiconductor

Part Number	2N7000
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	200mA (Ta)
Drive Voltage (Max Rds On,Min Rds On)	4.5V, 10V
Vgs(th) (Max) @ Id	3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	50pF @ 25V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	400mW (Ta)
Rds On (Max) @ Id, Vgs	5 Ohm @ 500mA, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-92-3
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Weight	-
Country of Origin	-

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